Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2010-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate |
2018-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20180099923-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
An object of the present invention is to provide a semiconductor device having a novel structure and good characteristics. A semiconductor device includes: an oxide semiconductor layer; a source electrode and a drain electrode electrically connected to the oxide semiconductor layer; a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode; . The source electrode and the drain electrode include an oxidized region formed by oxidizing a side surface. The oxidized region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. |
priorityDate |
2009-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |