http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180092856-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 |
| filingDate | 2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d744fe18aa8174fe89f9dad9f36763a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a263e9c725fda80b484aba791ecf62a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f56d0cf0da03116f578ab18fa1e9aec |
| publicationDate | 2018-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180092856-A |
| titleOfInvention | Manufacturing method of photomask blank, photomask blank, manufacturing method of photomask, photomask, and chrome metal target |
| abstract | The present invention relates to a transparent film comprising a transparent substrate, a silicon-containing film and a chromium-containing film in contact with each other, or a chromium-containing film in contact with the transparent substrate, wherein the silicon- At least one transition metal selected from titanium, vanadium, cobalt, nickel, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, silicon and at least one element selected from oxygen, nitrogen and carbon Containing film is formed by sputtering using a chromium metal target having a silver content of 1 mass ppm or less as a chromium-containing film of a photomask blank composed of a chromium-containing material . According to the present invention, even when a photomask is repeatedly used for pattern exposure with ArF excimer laser light or the like, the occurrence of defects in a film containing silicon is reduced. |
| priorityDate | 2017-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.