| abstract |
The method for manufacturing an SiC epitaxial wafer is a method for manufacturing an SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, wherein the epitaxial layer is epitaxially grown on a first condition And a step of forming a part of the SiC epitaxial layer under a second condition in which the Cl / Si ratio is lower than the first condition and the C / Si ratio is increased, The C / Si ratio in the condition is 0.6 or less, and the Cl / Si ratio is 5.0 or more. |