| abstract |
The claimed invention relates to a method for obtaining a semi-polar layer (480) of at least one nitride (N), the semi-polar layer being formed on the upper surface of a crystalline layer (410) Ga), indium (In) and aluminum (Al), the method comprising the following steps: starting from the top surface of the crystal layer, at least two opposing inclined facets (330, Etching the plurality of parallel grooves (460) having a crystal orientation {111}, wherein the opposing inclined facets (330, 331) have a crystal orientation {111}; Masking the upper surface of the crystalline layer 410 in such a way that the facets 330 have an unmasked crystal orientation {111}; - epitaxially growing a semi-polar nitride layer (480) from the unmasked facets (330), the etch comprising a crystalline layer (410) and at least one barrier covered by the crystalline layer (410) Layer 420 and the etch is performed in a selective manner relative to the barrier layer 420 in a manner such that the etch is stopped upon contact with the barrier layer 420, ) Is etched. |