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publicationDate 2018-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180088674-A
titleOfInvention Sensor using p-n semiconductor oxide heterostructure and method of using same
abstract pn metal oxide semiconductor (MOS) heterostructure-based sensors and systems are disclosed herein. The sensors and systems described herein include a first region comprising a p-type MOS material (e.g. NiO) and a second region comprising an n-type MOS material (e.g., In 2 O 3 ) Lt; / RTI &gt; While these sensors and systems can exhibit sensitivity and selectivity to NH 3 at ppb levels, they are capable of producing CO, NO, or their concentrations over a 1000-fold higher concentration (ppm) and a significant range (0-20 ppm) Combinations can be distinguished. These sensors and systems can be used to detect and / or quantify NH 3 in a sample comprising a biological sample (e.g., respiratory sample) and a combustion gas.
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