http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180082732-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate | 2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfda1193c674935f37ceda82128cfb7e |
| publicationDate | 2018-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180082732-A |
| titleOfInvention | Semiconductor device and semiconductor package having the same |
| abstract | The semiconductor device of the embodiment includes a first conductivity type semiconductor layer, a pit forming layer including at least one pit on the first conductivity type semiconductor layer, an active layer disposed on the pit forming layer, and an operating voltage reducing layer An electron blocking layer containing Al in a composition of 25% to 40% on the operating voltage reducing layer, and a second conductive type semiconductor layer disposed on the electron blocking layer. The semiconductor device according to the embodiment has an effect of improving the light efficiency by preventing the electrons in the active layer from overflowing to the second conductivity type semiconductor layer by increasing the Al composition of the electron blocking layer. |
| priorityDate | 2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.