http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180074893-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c30e8a2248ee5bef57f852132563d86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_694f81756e92c09f407b691917f41467 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43976855cbddae4ac34ca616f96215f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2177c44aba230737ef285dde698952ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b84651cee938e4d2ddd41063d8927a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c903fe7bf93549b1c21837fa4e87012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f94f61352f3013fb8154996300c9fcf |
| publicationDate | 2018-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180074893-A |
| titleOfInvention | method for fabricating Silicon carbide epitaxial wafer |
| abstract | A silicon carbide epitaxial wafer manufacturing method is provided. According to the present invention, there is provided a method of manufacturing a silicon carbide (SiC) substrate, comprising the steps of charging a silicon carbide (SiC) substrate in a reactor, raising the temperature inside the reactor to a set temperature, SiH 4 gas and C 3 H 8 gas are supplied into the reaction apparatus to form a buffer layer on the silicon carbide (SiC) substrate, and the SiH 4 gas and the C 3 H 8 gas are supplied into the reaction apparatus, Forming an epitaxial layer on the silicon carbide (SiC) substrate using SiH 4 gas and C 3 H 8 gas as a process gas at a set temperature and a set pressure after the buffer layer is formed, (HCl) is introduced as a process gas in the buffer layer forming step and the epi-thin film growing step In the in-situ etching step, a mixed gas of hydrogen or hydrogen (H 2) and hydrogen chloride (HCl) is supplied into the reaction apparatus. In the buffer layer forming step and the epi-thin film growing step, nitrogen (N 2) And the buffer layer forming step includes an initial process gas flow rate control step of controlling the initial process gas flow rate to be 1/5 or less of the process gas flow rate injected in the epilayer growth step. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112663137-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210080719-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116613056-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116613056-B |
| priorityDate | 2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.