| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-457 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-457
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate |
2017-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16fd9445b65e5592a0d1c7cd1632017b |
| publicationDate |
2018-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180073507-A |
| titleOfInvention |
Target for forming transparent conductive film, transparent conductive film, method of manufacturing target for forming transparent conductive film and method of manufacturing transparent conductive film |
| abstract |
[PROBLEMS] To provide a target for forming a transparent conductive film, a transparent conductive film, a method for manufacturing a target for forming a transparent conductive film, and a method for manufacturing a transparent conductive film which can suppress generation of arcs and particles at the time of sputtering, do. (Sn + Zn) = 7 to 17 at%, Zn / (In + Sn + Zn) = 0.5 to 12 at% And a peak intensity ratio (Sn 3 In 4 O 12 / In 2 O 3 ) of Sn 3 In 4 O 12 crystal phase to an In 2 O 3 crystal phase according to XRD measurement is 0.10 or less and a relative density is 97% or more And is a target for forming a transparent conductive film. |
| priorityDate |
2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |