| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21K9-00 |
| filingDate |
2016-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c86100390fd499b565962bec402d959
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d8aad499dddd40dc6175cdac0eef98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c1994e3e86ec7d95b9c6a4342605c4 |
| publicationDate |
2018-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180067364-A |
| titleOfInvention |
Semiconductor device and lighting apparatus |
| abstract |
The present invention relates to a semiconductor device, a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting device. A semiconductor device according to an embodiment includes a first conductive semiconductor layer 112; An active layer 114 disposed on the first conductive type semiconductor layer 112 including a quantum well 114W and a quantum wall 114B; And a second conductivity type including a semiconductor layer 116 and the quantum wall (114B) is, Al x Ga 1 disposed on the active layer (114) - x N barrier layer (0≤x <1) (114BA) and, the Al x Ga 1 - may include InN cluster (114C) disposed in the x N barrier layer (114BA). |
| priorityDate |
2016-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |