| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcf146c0d966f00b692d8ba59a106c2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e5c1df02d877e6ee35aae3939a8c7ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f6f46c77fc6427ed509436c5c22416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d786bc2dea8f15c50971bb8618d9807a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29f09f06bb72bc1bfb79d749129a26e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62 |
| publicationDate |
2018-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180063360-A |
| titleOfInvention |
Low Temperature Single Precursor ARC Hardmask for Multilayer Patterning Applications |
| abstract |
Methods of single precursor deposition of hard masks and ARC layers are described. The resulting film is a SiOC layer having a higher carbon content terminated with a high density silicon oxide SiO 2 layer having a low carbon content. The method comprises delivering a first deposition precursor to a substrate, wherein the first deposition precursor comprises a SiOC precursor and a first flow rate of oxygen containing gas; Activating the deposition species using a plasma, whereby a SiOC-containing layer is deposited over the exposed surface of the substrate. The second precursor gas is then delivered to the SiOC containing layer and the second deposition gas comprises a different or the same SiOC precursor having a second flow rate and a second flow rate of oxygen containing gas and the deposition gas The second deposition gas forms a SiO 2 -containing layer on the hard mask, and the SiO 2 -containing layer has very low carbon. |
| priorityDate |
2015-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |