| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_920a8db6de015e5d3e0143ee4b60f034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42f3ea1c9b4f85befb1761f8a88d5626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71383d5deec9375c4431f1aaf760aeec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fbb44306002ee5ea037cc55f7bed0f5 |
| publicationDate |
2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180062408-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and program |
| abstract |
The present invention controls the in-plane film thickness distribution of a film formed on a substrate. (a) forming a first layer on a substrate by supplying a raw material from a first nozzle; (b) modifying the first layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle; (A-1) a step of forming a film on a substrate by supplying a raw material from the first nozzle, and a step of forming a film on the substrate by repeating a cycle in which the step of forming the second layer is performed a predetermined number of times, (A-2) a step of supplying inert gas at a first flow rate smaller than the flow rate of the raw material from the second nozzle, and And an inert gas are supplied in this order. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210050445-A |
| priorityDate |
2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |