Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ba063482650d5e779660a0bc7730d31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a066ab643329c53f7b60390d625e1f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a86176ed3e6b37d751dfb12e67c0a08 |
publicationDate |
2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20180061751-A |
titleOfInvention |
Display device, and method of fabricating the same |
abstract |
A thin film transistor according to the present invention includes an active layer and a buffer layer which are positioned under a gate electrode, and the interface between the active layer and the buffer layer has a molecular weight 134 is disposed between the buffer layer and the active layer, deterioration of the interface characteristics between the buffer layer and the active layer can be prevented, and the device reliability characteristics of the thin film transistor can be improved. |
priorityDate |
2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |