| abstract |
The present invention provides a semiconductor device having good electrical characteristics. A first transistor having a first transistor and a second transistor, the first transistor comprising a first conductor disposed on a substrate, a first insulator disposed thereon, a first oxide disposed thereon, a second insulator disposed thereon, A second conductor disposed on the second insulator and having a side substantially coinciding with a side surface of the second insulator, and a side surface substantially coinciding with a side surface of the second conductor, A third insulator, a fourth insulator disposed in contact with a side of the second insulator, a side of the second conductor, and a side of the third insulator, and a fifth insulator disposed in contact with the first oxide and the fourth insulator , The second transistor has a third conductor, a fourth conductor disposed at least partially overlapping the third conductor, and a second oxide disposed between the third conductor and the fourth conductor, The conductor and the fourth conductor are electrically connected to the first conductor Semiconductor devices that are connected to each other. |