http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180045104-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
filingDate 2016-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce313efd1e0f6561e0061a29e938ecc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5837b0e923ce40400ff7469e6a36d979
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b606416761f28fd4d6abfa0808ef8279
publicationDate 2018-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180045104-A
titleOfInvention Method of atomic layer etching and method of fabricating semiconductor device using the same
abstract The present invention provides an atomic layer etch process comprising sequentially supplying etch gases suitable for etching each type of atom when etching a film comprising two or more atoms in atomic layer units, Remove them sequentially.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102099452-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200000817-A
priorityDate 2016-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24553
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23932
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID768
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14823
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593449
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419405613
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559526
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID455728551
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547107
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID98885
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID281
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524206
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24556
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458427267
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID222
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID402
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579030
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID410778979
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523397

Total number of triples: 56.