http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180029706-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate | 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37089596d83d24715cea606d8baed1a |
| publicationDate | 2018-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180029706-A |
| titleOfInvention | Semiconductor device and light emitting device package having thereof |
| abstract | An embodiment relates to a semiconductor device and a light emitting device package having the same. The semiconductor device of the embodiment includes a first AlGaN-based semiconductor layer, an etching-blocking layer on the first AlGaN-based semiconductor layer, the second AlGaN-based semiconductor layer on the etching-blocking layer, and a third AlGaN-based semiconductor layer on the second AlGaN- Layer, a third active layer on the AlGaN-based semiconductor layer, and a sixth AlGaN-based semiconductor layer on the active layer, wherein the second AlGaN-based semiconductor layer includes V-pits, the lower portion of the V-pits is disposed in the etch- The V-pits can extend to the active layer. In the embodiment, since the V-pits extend to the active layer and the dislocation defects are concentrated around the bottom of the V-pit, leakage current caused by dislocation defects and reliability degradation due to Mg diffusion can be improved. |
| priorityDate | 2016-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.