| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64c83212a058add5d80f9c8d7d954175 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20824eee396625ad20004b1ab7c19bf5 |
| publicationDate |
2018-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180019853-A |
| titleOfInvention |
Wafer |
| abstract |
One embodiment of a wafer includes: a sub-substrate comprising a monocrystalline silicon; An oxide film layer formed on the sub-substrate; And a thin film layer formed on the oxide layer and including polysilicon, wherein the sub-substrate has a specific resistance of 1 k? Cm to 10 k? Cm, and the wafer has a warp controlled to 50 m or less have. |
| priorityDate |
2016-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |