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filingDate 2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aa3687e52eb202e0b96200b5878f62a
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publicationDate 2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20180018496-A
titleOfInvention A transistor having a sub fin layer
abstract The sub fin layer is deposited in the trench in the insulating layer on the substrate. The fins are deposited on the sub pin layer. The pin has an upper portion and opposing sidewalls. The fin comprises a first semiconductor material. The sub-pin layer comprises a III-V semiconductor material.
priorityDate 2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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