| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cdba164df9c9d3df40ada2bfa32f15e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee588e4c2b5924607b1d26286c7d3a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e00b32d8d3759406ccf0118edce7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bbffe4dbef6680a385d52d61efa02e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7535312ace812d59831a879fcfec0323 |
| publicationDate |
2018-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180016427-A |
| titleOfInvention |
Line-edge for improved patterning - conformal stripping carbon film for roughness reduction |
| abstract |
Embodiments of the disclosure relate to the deposition of conformal organic materials on a feature or hard mask formed in a photoresist to reduce critical dimensions and line edge roughness. In various embodiments, a super-conformal carbon-based material is deposited on the features formed in the high resolution photoresist. Thus, the conformal organic layer formed on the photoresist reduces both the critical dimensions of the features and the line edge roughness. |
| priorityDate |
2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |