| abstract |
Embodiments of the present invention generally provide methods and compositions for depositing metal-containing materials. The methods include deposition processes that form metals, metal carbides, metal suicides, metal nitrides, and metal carbide derivatives by a vapor deposition process including pyrolysis, CVD, pulsed CVD or ALD. In one embodiment, depositing a dielectric material having a dielectric constant of greater than 10, forming a feature definition in the dielectric material, depositing conformally a work-function material on the sidewalls and bottom of the feature definition, and Depositing a metal gate fill material over the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal halide precursor having the formula (MX Y ), wherein M And y is from 3 to 5. The present invention also relates to a method of processing a substrate, wherein the substrate is a tantalum, hafnium, titanium and lanthanum, and X is a halide selected from the group consisting of fluorine, chlorine, bromine or iodine. |