| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2686 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55d11cdd71f650254296953145834858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aba08fe8bfd1900fdf418aeb98b76ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca86693ea84adc19b239d87e09febf2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20ead700e25a8cba54a3756ed2c342fb |
| publicationDate |
2018-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180015159-A |
| titleOfInvention |
A process for manufacturing a semiconductor element comprising a layer for trapping charge |
| abstract |
The present invention relates to a process for the production of semiconductor elements, the process comprising a stage of rapid thermal processing of a substrate comprising a charge-trapping layer, which can impair the RF characteristics of the substrate. According to the present invention, a rapid thermal processing stage is followed by a heat treatment of the substrate at 700 占 폚 to 1100 占 폚 for a time of at least 15 seconds. |
| priorityDate |
2015-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |