http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180007324-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2217-0036 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-419 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-413 |
| filingDate | 2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a990c119bc5cbca18b38e99cda244f |
| publicationDate | 2018-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20180007324-A |
| titleOfInvention | Semiconductor device |
| abstract | Provided is a semiconductor device constituted by a FinFET capable of reducing power consumption. The semiconductor device includes a driver circuit DRV having a plurality of FinFETs, a memory cell MC having a plurality of FinFETs and supplied with a first output signal from the driver circuit DRV through word lines Wn to Wn + 2, A second power supply line Lgd1 to which a second power supply potential is supplied, a first power supply line Lgd0, a second power supply line Lgd1, and a driver circuit DRV which are connected to the first power supply potential or the second power supply potential And a ground potential setting circuit GSV for supplying to the driver circuit DRV as an operation potential. The first power supply potential or the second power supply potential selected by the ground potential setting circuit GSV is supplied to the N-type FinFET FN3 among the plurality of FinFETs included in the driver circuit DRV. |
| priorityDate | 2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.