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filingDate 2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170141642-A
titleOfInvention Structure and formation method of finfet device
abstract A structure and a method of forming a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a pin structure on the semiconductor substrate. The semiconductor device structure also includes a gate stack overlying a portion of the fin structure and a source / drain structure over the fin structure and adjacent to the gate stack. The semiconductor device structure further includes an isolation layer between the source / drain structure and the semiconductor substrate.
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type http://data.epo.org/linked-data/def/patent/Publication

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