| abstract |
A method of forming gate aligned contacts and gate aligned contacts is disclosed. For example, a method of fabricating a semiconductor structure includes forming a plurality of gate structures over an active region formed over a substrate. Each of the gate structures includes a gate dielectric layer, a gate electrode, and a sidewall spacer. A plurality of contact plugs are formed, and each contact plug is formed between the sidewall spacers of two adjacent gate structures among the plurality of gate structures. A plurality of contacts are formed and each contact is formed between the sidewall spacers of two adjacent gate structures of the plurality of gate structures. A plurality of contacts and a plurality of gate structures are formed subsequent to forming a plurality of contact plugs. |