| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
2016-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1aeaa5e8295bafa31bd1d589b5db1145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daddf117ec6a46e72ef252c92c0cde05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d71652c285ef9a7f20f7242929a69ee6 |
| publicationDate |
2017-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170123847-A |
| titleOfInvention |
Ultraviolet Light-Emitting Diode with p-type ohmic contact electrode pattern to enhance the light extraction |
| abstract |
The present invention provides an ultraviolet light-emitting diode element and a method of manufacturing the same. This ultraviolet light-emitting diode element comprises a conductive substrate; A metal reflective layer disposed on the conductive substrate; A p-electrode pattern disposed on the metal reflection layer; An insulating layer filling between the p-electrode patterns; A p-type GaN layer disposed on the p-electrode pattern and the insulating layer; An active layer disposed on the p-type GaN layer; An n-type AlGaN layer disposed on the active layer; And an n-electrode pattern disposed on the n-type AlGaN layer. The metal reflective layer may be aluminum or an aluminum alloy, and the p-electrode pattern may include ITO or silver. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022376013-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110649130-A |
| priorityDate |
2016-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |