Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17784 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17724 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17736 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-1776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-17772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0013 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-177 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed |
publicationDate |
2017-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20170120195-A |
titleOfInvention |
Semiconductor device |
abstract |
It is an object to provide a semiconductor device in which power consumption can be reduced. Another object of the present invention is to provide a highly reliable semiconductor device using a programmable cell such as a programmable logic device (PLD). The power supply voltage supplied to the basic block is changed in accordance with the change in the configuration of the connection between the basic blocks. That is, when the connection structure between the basic blocks becomes such that the basic block does not contribute to the circuit, the supply of the power supply voltage to the basic block is stopped. Also, the supply of the power supply voltage to the basic block is controlled using a programming cell formed using a field effect transistor formed with an oxide semiconductor in a channel forming region, and the field effect transistor has an extremely low off current and an extremely low leakage current . |
priorityDate |
2010-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |