| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-00 |
| filingDate |
2017-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acf2fee3c3ab136d773cd735e5e7d1bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a029f73be78d355478603a67427c5a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da |
| publicationDate |
2017-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170113215-A |
| titleOfInvention |
Impurity diffusion agent composition and method of producing semiconductor substrate |
| abstract |
A semiconductor substrate to which an impurity diffusion component is diffused is provided with a three-dimensional structure having minute pores of nanoscale on the surface thereof. A diffusion agent composition capable of uniformly and uniformly diffusing boron on a semiconductor substrate by using the composition, and a method of producing a semiconductor substrate using the composition. A diffusion agent composition containing an impurity diffusion component (A) and a Si compound (B) capable of generating a silanol group by hydrolysis, characterized in that the impurity diffusion component (A) Lt; / RTI > |
| priorityDate |
2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |