http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170102746-A

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publicationDate 2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170102746-A
titleOfInvention Schottky diode and manufacturing method of the same
abstract The Schottky diode includes a first semiconductor layer, an intermediate layer provided on the first semiconductor layer, a second semiconductor layer provided on the intermediate layer, an anode provided on the second semiconductor layer, and a cathode provided on the first semiconductor layer. . The width of the second semiconductor layer is larger than the width of the intermediate layer when viewed in cross section.
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