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filingDate 2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40473a28bdc6f5bd60885dc02985d829
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publicationDate 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170101242-A
titleOfInvention Process for fabricating semiconductor nanowires or microwires having insulated roots
abstract The present invention provides a method of manufacturing an electronic device (10) comprising a substrate (14) and microwires or nanowires (20) supported on the substrate, the method comprising the steps of covering the microwires or nanowires with an insulating layer Covering the insulating layer with an opaque layer, laminating a first resist layer extending on the substrate between the wires, etching the first resist layer by photolithography to a first thickness, Etching the remaining first resist layer by a plasma etch to a second thickness; etching a portion of the opaque layer not covered by the remaining first resist layer as a result of the previous step; Etching the portion of the insulating layer that is not the first step, removing the remaining first resist layer as a result of the previous step, and removing the opaque layer And more particularly, to a method of manufacturing an electronic device.
priorityDate 2014-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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