| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01017 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bb8561798ca6c9749388b74071b992a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc364129d2dbe5b9e2c2be854baaf902
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c292195d06be1d8618efd988e838349f |
| publicationDate |
2017-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170098706-A |
| titleOfInvention |
Film forming method |
| abstract |
There is provided a film forming method capable of forming a void-free silicon film, a germanium film or a silicon germanium film in a minute concave portion without causing a decrease in productivity or complication of the process. In forming a silicon film, a germanium film or a silicon germanium film on the substrate W on which the fine concave portions 202 are formed on the surface of the substrate W to be processed by the CVD method, The film forming gas and the chlorine-containing compound gas are supplied, and the adsorption of the film forming gas is selectively inhibited by the chlorine-containing compound gas at the upper portion of the fine concave portion 202. |
| priorityDate |
2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |