| abstract |
Structure and its fabrication methodology relates to a deeply depleted channel (DDC) design that allows a CMOS-based device to have a reduced? V T compared to conventional bulk CMOS, The threshold voltage V T can be set much more precisely. A new dopant profile that represents a unique notch makes it possible to adjust the V T setting within a precise range. This V T setting range can be extended by appropriate selection of the metal to accommodate a very wide range of V T settings on the die. The DDC design can also have a strong body effect compared to conventional bulk CMOS transistors, which can enable considerable dynamic control of power consumption in the DDC transistor. As a result, V T can be controlled independently of the (low σV having a T) and V DD, and thus the body bias for a given device can be adjusted separately and V T. |