| abstract |
The semiconductor device includes a substrate, at least one first isolation structure, at least two second isolation structures, and an epitaxial structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor pins are disposed between the second isolation structures, and the second isolation structures extend deeper into the substrate than the first isolation structure. The epitaxial structure is disposed on the semiconductor fins. At least one void is present between the first isolation structure and the epitaxial structure. |