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publicationDate 2017-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170093919-A
titleOfInvention Semiconductor device manufacturing method, substrate processing apparatus, and recording medium
abstract A step of supplying a raw material gas to the substrate through a first nozzle, a step of supplying nitriding gas to the substrate through the second nozzle, and a step of supplying an oxidizing gas to the substrate through the third nozzle at the same time A step of forming an oxynitride film on the substrate by performing a cycle a predetermined number of times, wherein in the step of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, In the step of supplying the gas, the inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.
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