| abstract |
Thereby improving the film quality of the film formed on the substrate. A cycle including a step of supplying a halogen-based first process gas to the substrate, a process of supplying a halogen-free second process gas to the substrate, and a process of supplying a dopant gas to the substrate are repeated a predetermined number of times Thereby forming a seed layer doped with a dopant on the substrate, and a step of forming a film on the seed layer by supplying a third process gas to the substrate. |