abstract |
The present invention comprises a support (14) comprising a surface (18) comprising flat butt-jointed facets inclined relative to one another; Consisting essentially of a first compound selected from the group consisting of Group III-V compounds, Group II-VI compounds, and Group IV compounds in contact with the support in at least a portion of the region of the joints (22) between the facets 26); And a three-dimensional semiconductor element (28) of a cone or cone-shaped, wire-type, nanometer-size or micrometer-scale, mainly composed of the first compound on the seed. |