http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170088037-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2529bf025093a36333462e9fabc2e204 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-593 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-5831 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-593 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-5831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3b1b41f57e1914e57e0d5134e3bea69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2be8c10794445556097c4cc9170eacc5 |
| publicationDate | 2017-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170088037-A |
| titleOfInvention | Preparing method of multi-layer hexagonal boron nitride nanostructure on sapphire substrate |
| abstract | The present invention relates to a method of manufacturing a semiconductor device, comprising: heating an ammonia borane to form borazine (first step); And a step of disposing a sapphire substrate in a reaction furnace and introducing the borazine and hydrogen to form a multi-layered hexagonal boron nitride on the sapphire substrate (second step), the multi-layer hexagonal nitridation using a sapphire substrate A method for producing a boron nanostructure is provided. Therefore, unlike the case where h-BN is formed using a conventional metal catalyst, a multi-layered hexagonal boron nitride having a high quality single crystal orientation can be produced in a large area through a low pressure chemical vapor deposition method. The multi-layered h-BN layer directly formed on the sapphire substrate can be used as a substrate of a graphene field effect transistor (FET) and an electronic device because the surface is smooth and the electron mobility is very high. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102072580-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113089091-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629696-B1 |
| priorityDate | 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.