| abstract |
A thin film transistor substrate according to an embodiment includes a substrate; A first channel layer disposed on the substrate and including a nitride based semiconductor layer, a first source electrode electrically coupled to a first region of the first channel layer, a first drain electrode electrically coupled to a second region of the first channel layer, A switching thin film transistor including a first gate electrode disposed on a first channel layer, and a first depletion-forming layer disposed between a first channel layer and a first gate electrode; A second channel layer disposed on the substrate and including a nitride based semiconductor layer, a second source electrode electrically coupled to a first region of the second channel layer, a second drain electrode electrically coupled to a second region of the second channel layer, A second gate electrode disposed on the second channel layer, and a second depletion-forming layer disposed between the second channel layer and the second gate electrode; . ≪ / RTI > |