| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2001-134372 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133514
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
2016-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7de27e01bafa6645d2972f13e4f6610b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a888515a21cd5d817ff38a26c927b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b2fc34bbfc8e6555eec55c09f4dcbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_555d87f5e8143f70075efe3036b279a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5d3c673a6444a8de54ab62d4cd4395f |
| publicationDate |
2017-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170083753-A |
| titleOfInvention |
Tft substrate, display panel and display device having the same |
| abstract |
A thin film transistor substrate according to an embodiment includes a substrate; A channel layer disposed on the substrate and including a nitride based semiconductor layer and having a recessed region recessed downward in the top surface; a source electrode electrically connected to the first region of the top surface of the channel layer; A thin film transistor including a drain electrode electrically connected to the region and a gate electrode arranged in a recess region of the channel layer; . ≪ / RTI > |
| priorityDate |
2016-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |