http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170083730-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04044fe88facc3d859e795f24a1ab5e7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2016-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a231422c0d7837187104efe0dc86a3ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3a69eaecae3aa0def576912ec3d01fa |
| publicationDate | 2017-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170083730-A |
| titleOfInvention | Electric device having analog memristive and memcapacitive characteristics and manufacturing method of the device |
| abstract | The present invention relates to a new concept of an electronic device comprising a first layer of n-type or p-type semiconductor material; A second layer which constitutes the first layer and the pn junction diode and performs a charge storing function for storing the charge together; And a first electrode and a second electrode respectively connected to the first layer and the second layer constituting the pn junction. According to the present invention, a charge storage characteristic is added based on a diode structure forming a pn junction, thereby providing a new type of electronic device in which electrical resistance and capacitance are changed simultaneously. In addition, the electronic device of the present invention exhibits nonvolatility characteristics that simultaneously memorize changes in electrical resistance and capacitance, and is effective as a memristor and a membrane capacitor. The electronic device of the present invention can be applied to a memory device, a logic device, and a nerve impulse device as a memristor device or a membrane capacitor device because it has both an analog electrical resistance change and a capacitance change simultaneously. There is an excellent effect that a memory element, a logic element and a nerve impulse element can be constituted. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210151331-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220133425-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190046116-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110957377-A |
| priorityDate | 2016-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.