http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170078949-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9c8be5926503f1c3cb4dbcce92afd13 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L35-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-24 |
| filingDate | 2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c026dbd8e2e9dd5077287bc297be23c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f68a722da3f37f2ca35b24d59a6526d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74fdb6732b737f6759ccc98098a3e6fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82f87e1b4f9a552d51c0eee83736c168 |
| publicationDate | 2017-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170078949-A |
| titleOfInvention | Au Included bismuth telluride thermoelectric composite and fabrication method thereof |
| abstract | The present invention relates to a Bi 2 Te 3 thermoelectric composite material containing Au and a method of manufacturing the same. In order to produce an interface between Au and a semiconductor BT, a method of forming a Au- The present invention relates to a Bi 2 Te 3 based thermoelectric composite material containing Au, which is produced by a discharge plasma sintering method after co-crystal growth with nano dots, and a method of manufacturing the same. The Bi 2 Te 3 thermocomposite material containing Au according to the present invention and its manufacturing method contribute to the improvement of the power factor and the reduction of the K lattice according to the energy filtering effect by the phonon scattering including Au nano materials, And it has an advantage of being able to manufacture a thermoelectric material having excellent thermoelectric properties and having high density and excellent thermoelectric properties by a bottom-up synthesis method and a discharge plasma sintering method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3792987-A1 |
| priorityDate | 2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.