http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170077417-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K9-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-1216 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K9-04 |
| filingDate | 2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8d8c4c7430ce50e1d6c613950d927b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09e9bba2c417a864f15f0e0bbdb79c47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22766e6a897ed6ba7b42f9608daf8b85 |
| publicationDate | 2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20170077417-A |
| titleOfInvention | Composition for preparing planarization layer and planarization layer prepared by using the same |
| abstract | The present invention provides a composition for forming a planarization layer and a planarization layer prepared using the same, wherein the composition for forming a planarization layer comprises a siloxane resin having an imide structure, inorganic particles surface-modified with an organic substituent, do. The composition for forming a flattening layer of the present invention is excellent in heat resistance, transparency, transparency, and transparency since it can be cured at a low temperature of 250 DEG C or less and is excellent in adhesion with other organic materials, It is possible to manufacture a planarizing layer having a low dielectric constant and a low gas generation at 350 ° C. for a certain period of time in a post-process using chemical vapor deposition, which is excellent in hardness and flatness. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11198762-B2 |
| priorityDate | 2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 166.