| abstract |
Embodiments of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one embodiment, the method includes forming an epitaxial film over the semiconductor fin, wherein the epitaxial film comprises a top surface having a first facet and a second facet; And a second precursor gas comprising at least one chlorinated silane at a temperature of from about 375 DEG C to about 450 DEG C and a chamber pressure of from about 5 Torr to about 20 Torr, And forming an epitaxial layer on at least the top surface of the epitaxial film by alternately exposing the top surface to the gas. |