| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3459
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1072 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| filingDate |
2015-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7846b438fb224fdd28fd026fafec9b02 |
| publicationDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170069010-A |
| titleOfInvention |
Page buffer and memory device having the same |
| abstract |
The present invention relates to a reference current generator configured to generate a reference current to precharge a bit line; A current sensing unit configured to change or maintain the voltage of the selected node in accordance with the current change of the bit line; A first data sensing unit configured to store first data according to a voltage change of the selected node; And a second data sensing unit configured to consecutively store second data according to a voltage change of the selected node when the first data is stored in the first data sensing unit, and a memory device including the same do. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037629-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190006840-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11120876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437107-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9990969-B2 |
| priorityDate |
2015-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |