| abstract |
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including an oxidized region on a part of an upper surface thereof, a first wire pattern spaced apart from the substrate and extending in a first direction, a first wire pattern surrounding the first wire pattern, A gate electrode extending in two directions, at least a part of the gate electrode overlapping with the oxide region, and a source / drain overlapping with the oxidation region and connected to the first wire pattern. |