| abstract |
Chemical Mechanical Polishing (CMP) compositions, methods, and systems are for polishing patterned semiconductor wafers. A CMP composition comprising an abrasive having a pH > 7 and a water soluble aluminum compound additive suppresses the removal rate of the CMP stop layer (silicon containing layer, e.g., silicon nitride, silicon oxide or silicon carbide). The CMP composition optionally comprises a surfactant to assist in wetting the surface; Corrosion inhibitors to provide corrosion inhibition on metal lines, vias, or trenches; And a pH adjusting agent used to adjust the pH of the CMP polishing composition. |