| abstract |
In the fabrication of a magnetoresistive memory device, a memory structure is formed that includes a bottom electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode on a substrate. A deposition process using a plasma is performed to form a first protective film covering the surface of the memory structure. A second protective film is formed on the first protective film through a vapor deposition process using a plasma different from that used for forming the first protective film. By providing the first and second protective films, the memory structure can be protected and the characteristics of the magnetoresistive memory device can be improved. |