| abstract |
An embodiment includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the light emitting structure including a first groove penetrating the second semiconductor layer and the active layer on one surface thereof; A gallium nitride substrate disposed on the other surface of the light emitting structure; A reflective electrode layer covering one side of the light emitting structure and the side walls of the first groove; A first ohmic electrode electrically connected to the first semiconductor layer through the first groove; And a first insulating layer electrically isolating the first ohmic electrode from the reflective electrode layer. |