| abstract |
An object of the present invention is to provide an oxide sintered body for use in a sputtering target, which is free from an abnormal discharge phenomenon even in high-power film formation and has no target crack. Wherein when the atomic ratio of elements constituting the sintered body and the contents of zinc, aluminum and titanium are Zn, Al and Ti, respectively, as an oxide sintered body having zinc, aluminum, titanium and oxygen as constituent elements, Al / (Zn + Al + Ti) = 0.035 to 0.050 Ti / (Zn + Al + Ti) = 0.05 to 0.20 , And the mean grain size of the crystal grains having the Zn 2 TiO 4 crystal phase as a parent phase in the sintered body is 5 탆 or less. |