| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1438
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e409b5a68a2d36a094c2e79fceafa3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b34037e67469fe04557d82cc6b9b75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c261ac103f14a99146a83c570ab7d442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c76137dd1cdb7016fbc2880f8b4ca825 |
| publicationDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170034215-A |
| titleOfInvention |
Method of fabricating synapse memory device |
| abstract |
The present invention provides a method of manufacturing a synapse memory device that can be driven at a low voltage and can realize multi-level. The synapse memory device includes a two-transistor structure for sharing the drain region of the first transistor including the memory layer and the first source region of the second transistor as one common region. And a voltage is applied through the shared area to control the synapse memory device. The memory layer may implement a non-volatile multilevel memory function including a charge storage layer and a threshold voltage conversion layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180124375-A |
| priorityDate |
2015-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |