| abstract |
The present invention relates to a pattern forming method capable of achieving both line-through roughness performance, suppression of development defects, and pattern shape at a very high dimensional level, particularly in pattern formation in a very fine (for example, a line width of 50 nm or less) And to provide the above objects. Another object of the present invention is to provide a method of manufacturing an electronic device including the pattern forming method, and an electronic device manufactured by the method. (1) a step of forming a film by a sensitizing actinic ray-sensitive or radiation-sensitive resin composition containing (A) - (C) (A) a resin having a repeating unit having a phenolic hydroxyl group and decomposed by the action of an acid to generate a polar group, (B) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (C) a compound having a cationic site and an anionic site in the same molecule, wherein the cationic site and the anionic site are linked by a covalent bond (2) a step of exposing the film, and (3) a pattern forming method having a step of developing the exposed film by using a developing solution containing an organic solvent to form a negative pattern; a method of manufacturing an electronic device including the pattern forming method; and ≪ / RTI > |