| abstract |
A method of forming a 2D metal chalcogenide film using atomic layer deposition by laser is disclosed. The direct growth method comprises the steps of: depositing a layer of metal-containing molecules on the surface of a heated substrate; Reacting a layer of metal-containing molecules with the delivered chalcogen-containing radical precursor gas using a plasma to form a 2D amorphous film of metal chalcogenide; And then laser annealing the 2D amorphous film to form a crystalline crystalline film of metal chalcogenide, wherein the metal chalcogenide has the form of MX or MX 2 , where M is a metal and X is a chalcogenide. |